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 1719 - 20
20 Watt - 28 Volts, Class C Microwave 1700 - 1900 MHz
GENERAL DESCRIPTION
The 1719-20 is a COMMON BASE transistor capable of providing 20 Watts of Class C, RF output power over the band 1700-1900 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes Input and Output prematching and utilizes Gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder sealed package.
CASE OUTLINE
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 67 Watts
50 Volts 3.5 Volts 6.0 A - 65 to + 200 oC + 200 oC
ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1900 MHz Vcb = 28 Volts Pin = 5.0 Watts As Above F = 1.7 GHz, Pin = 5.0 MIN
20 5.0 6.0 6.5 38 4:1
TYP
MAX
UNITS
Watt Watt dB %
c
VSWR1
BVces BVebo Icbo hFE Cob
jc
Collector to Emitter Breakdown Emitter to Base Breakdown Collector to Base Current Current Gain Output Capacitance * Thermal Resistance
Ic = 10 mA Ie = 10 mA Vcb = 28 Volts
50 3.5 4.0 20 2.6
Volts Volts mA
o
Vce = 5 V, Ic = 1.2 A F =1 MHz, Vcb = 28 V
pF C/W
* Not measureable due to Output Match
Issue August 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1719-20
August 1996


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